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DIM200PLM33-A000
DIM200PLM33-A000
IGBT Chopper Module
Preliminary Information
Replaces issue April 2003, version DS5597-1.1 DS5597-2.0 May 2003
FEATURES
I I I I
KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 3.2V 200A 400A
10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I I
Choppers Traction Auxiliaries
1(A/C2)
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM200PLM33-A000 is a 3300V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This device is optimised for applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
2(K) 8(C2)
3(E2) 7(E2) 6(G2)
Fig. 1 Chopper circuit diagram - lower arm control
ORDERING INFORMATION
Order As: DIM200PLM33-A000 Note: When ordering, please use the whole part number.
Outline type code: P (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PLM33-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage - per module Partial discharge - per module Tcase = 85C 1ms, Tcase = 115C Tcase = 25C, Tj = 150C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 2450V, V2 = 1800V, 50Hz RMS VGE = 0V Test Conditions Max. 3300 20 200 400 2608 6000 10 Units V V A A W V pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 33mm 20mm 175 Parameter Thermal resistance - transistor (IGBT arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (IGBT arm) Thermal resistance - diode (diode arm) Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M5 -40 150 125 125 5 4 C C C Nm Nm 96 96 16 C/kW C/kW C/kW Min. Typ. Max. 48 Units C/kW
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PLM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current (IGBT arm) IGES VGE(TH) VCE(sat) Gate leakage current (IGBT arm) Gate threshold voltage (IGBT arm) Collector-emitter saturation voltage (IGBT arm) IF Diode forward current (IGBT arm) Diode forward current (diode arm) IFM Diode maximum forward current (IGBT arm) Diode maximum forward current (diode arm) VF Diode forward voltage IF = 200A (IGBT arm) IF = 200A (Diode arm) IF = 200A, Tcase = 125C (IGBT arm) IF = 200A, Tcase = 125C (diode arm) Cies Cres LM RINT SCData Input capacitance (IGBT arm) Reverse transfer capacitance (IGBT arm) Module inductance - per switch Internal transistor resistance (IGBT arm) Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 2500V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 I1 I2 2.5 2.5 2.5 2.5 45 2.5 30 0.54 1300 1100 V V V V nF nF nH m A A tp = 1ms 400 A Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C VGE = 20V, VCE = 0V IC =20mA, VGE = VCE VGE = 15V, IC = 200A VGE = 15V, IC = 200A, , Tcase = 125C DC DC tp = 1ms Min. 4.5 Typ. 5.5 3.2 4.0 200 200 400 Max. 1 15 2 6.5 Units mA mA A V V V A A A
Note:
Measured at the power busbars and not the auxiliary terminals) L* is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PLM33-A000
ELECTRICAL CHARACTERISTICS - IGBT ARM
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 200A, VR = 1800V, dIF/dt = 1100A/s Test Conditions IC = 200A VGE = 15V VCE = 1800V RG(ON) = RG(OFF) =10 Cge = 33nF L ~ 100nH Min. Typ. 1300 200 170 640 250 290 6 115 165 130 Max. Units ns ns mJ ns ns mJ C C A mJ
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy Test Conditions IC = 200A VGE = 15V VCE = 1800V RG(ON) = RG(OFF) =10 Cge = 33nF L ~ 100nH IF = 200A, VR = 1800V, dIF/dt = 1000A/s Min. Typ. 1600 250 240 640 300 420 190 185 220 Max. Units ns ns mJ ns ns mJ C A mJ
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PLM33-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 750g Module outline type code: P
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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